Semiconductor manufacturing processes

Overview of Semiconductor Manufacturing Processes

Semiconductor devices are constructed through a series of intricate nanofabrication steps applied to the surface of ultra-pure single crystal silicon substrates, commonly referred to as wafers. Two prevalent types of wafers used in the manufacturing process include the 300 mm wafers, which are essential for advanced miniaturization required for modern devices, and the 200 mm wafers, which are more suitable for smaller lot productions, particularly for developing Internet of Things (IoT) devices.

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1. Cleaning the Wafers

Prior to commencing the manufacturing process, the silicon wafers are extensively cleaned to eliminate any impurities. Even the slightest contamination can lead to flaws in the final product. This is achieved using chemical agents tailored to remove everything from ultra-fine particles to traces of organic and metallic residues that may have been generated during prior processes.

• Wet Station: FC-
• Single Wafer Cleaner: SU-, SU-, SU-

2. Film Deposition

Thin films of materials, such as silicon oxide and aluminum, are deposited onto the wafer using multiple methods including sputtering, which involves bombarding target materials with ions, and chemical vapor deposition (CVD), which utilizes reactive gases to form thin films via chemical reactions.

3. Post-deposition Cleaning

Following the deposition, any minute particles lingering on the wafer are removed through various physical cleaning techniques, ensuring the surface is pristine for subsequent steps.

• Spin Scrubber: SS-
• Single Wafer Cleaner: SU-, SU-, SU-

4. Resist Coating

The next step involves applying a photosensitive resist to the wafer surface. During this process, the wafer is spun to achieve a uniformly thin and consistent coating of resist.

• Coat/Develop Track: DT-, SK-60EX/SK-80EX, SC-80EX

5. Exposure and Development

Using deep ultraviolet radiation, patterns are projected onto the coated wafers through masks, altering the exposed regions of the resist. After exposure, a developer is applied to dissolve the exposed areas, leaving behind a patterned resist mask that prepares the wafer for etching operations.

• Coat/Develop Track: DT-, SK-60EX/SK-80EX

6. Etching

Utilizing either wet or dry etching techniques, the material under the resist is removed, forming the intended circuit patterns on the wafer.

• Wet Station: FC-
• Single Wafer Cleaner: SU-, SU-, SU-

7. Implantation of Impurities

To impart semiconducting properties to the silicon substrate, ions such as phosphorus or boron are carefully implanted.

8. Activation

Activation follows, during which high-temperature processing, achieved through methods like flash lamp annealing, is employed to initiate the electrical activity of the doped ions, crucial for transistor formation.

• Flash Lamp Annealing System: LA-

9. Resist Stripping

In the concluding stages, any remaining resist is stripped from the wafer through either chemical baths or ashing, and the wafer is subsequently cleaned to remove any residue.

• Wet Station: FC-
• Single Wafer Cleaner: SU-, SU-, SU-

10. Assembly

Finally, the wafers are diced into individual chips, connected to a lead frame through wire bonding, and encased in protective epoxy resin, preparing them for use in electronic devices.

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